Branched Hydrosilane Oligomers as Ideal Precursors for Liquid-Based Silicon-Film Deposition.
Michael HaasViktor ChristopoulosJudith RadebnerMichael HolthausenThomas LainerLukas SchuhHarald FitzekGerald KothleitnerAna TorviscoRoland FischerOdo WunnickeHarald StuegerPublished in: Angewandte Chemie (International ed. in English) (2017)
Herein a convenient synthetic method to obtain 2,2,3,3-tetrasilyltetrasilane 3 and 2,2,3,3,4,4-hexasilylpentasilane 4 on a multigram scale is presented. Proton-coupled 29 Si NMR spectroscopy and single-crystal X-ray crystallography enabled unequivocal structural assignment. Owing to their unique properties, which are reflected in their nonpyrophoric character on contact with air and their enhanced light absorption above 250 nm, 3 and 4 are valuable precursors for liquid-phase deposition (LPD) and the processing of thin silicon films. Amorphous silicon (a-Si:H) films of excellent quality were deposited starting from 3 and characterized by conductivity measurements, ellipsometry, optical microscopy, and Raman spectroscopy.