Te x Se 1- x Photodiode Shortwave Infrared Detection and Imaging.

Short-wave infrared detectors are playing an increasingly important role in the fields of autonomous driving, food safety, disease diagnosis and scientific research. However, the mature short-wave infrared camera such as InGaAs has the disadvantage of complexly heterogeneous integration with complementary metal-oxide-semiconductor (CMOS) readout circuits, leading to high cost and low imaging resolution. Herein, we report a low-cost, high-performance, and high-stability Te x Se 1- x short-wave infrared photodiode detector. The Te x Se 1- x thin film is fabricated through CMOS-compatible low-temperature evaporation and post-annealing process, showcasing the potential of direct integration on the readout circuit. The device demonstrates a broad-spectrum response of 300-1600 nm, a room-temperature specific detectivity of 1.0 × 10 10 Jones, a -3 dB bandwidth up to 116 kHz, and a linear dynamic range of over 55 dB, achieving the fastest response among Te-based photodiode devices and a dark current density 7 orders of magnitude smaller than Te-based photoconductive and field-effect transistor devices. With a simple Si 3 N 4 packaging, the detector shows high electric stability and thermal stability, meeting the requirements for vehicular applications. Based on the optimized Te x Se 1- x photodiode detector, we demonstrate the applications in material identification and masking imaging. Our work paves a new way for CMOS-compatible infrared imaging chips. This article is protected by copyright. All rights reserved.