Zn-Alloyed CsPbI3 Nanocrystals for Highly Efficient Perovskite Light-Emitting Devices.
Xinyu ShenYu ZhangStephen V KershawTianshu LiCongcong WangXiaoyu ZhangWenyan WangDaguang LiYinghui WangMin LuLijun ZhangChun SunDan ZhaoGuanshi QinXue BaiWilliam W YuAndrey L RogachPublished in: Nano letters (2019)
We alloyed Zn2+ into CsPbI3 perovskite nanocrystals by partial substitution of Pb2+ with Zn2+, which does not change their crystalline phase. The resulting alloyed CsPb0.64Zn0.36I3 nanocrystals exhibited an improved, close-to-unity photoluminescence quantum yield of 98.5% due to the increased radiative decay rate and the decreased non-radiative decay rate. They also showed an enhanced stability, which correlated with improved effective Goldschmidt tolerance factors, by the incorporation of Zn2+ ions with a smaller radius than the Pb2+ ions. Simultaneously, the nanocrystals switched from n-type (for CsPbI3) to nearly ambipolar for the alloyed nanoparticles. The hole injection barrier of electroluminescent LEDs was effectively eliminated by using alloyed CsPb0.64Zn0.36I3 nanocrystals, and a high peak external quantum efficiency of 15.1% has been achieved.