Flexible High-Entropy Poly(vinyl alcohol) Dielectric Films Were Prepared at a Low Temperature and Applied to an Indium Gallium Zinc Oxide Thin-Film Transistor.

In recent years, more and more attention has been paid to flexible thin-film transistors (TFTs). Therefore, we combined HfMgTiYZrO x high-entropy metal oxide and poly(vinyl alcohol) (PVA) organic material to prepare a flexible dielectric layer. We fabricated metal-insulator-metal (MIM) and TFT devices and carried out flexible tests. The test results show that the mixed dielectric layer attains a leakage current of 3.6 × 10 -11 A under the bending radius of 5 mm. In the application of the TFT, the device still has good performance after 10 000 bends with a mobility of 3.1 cm 2 V -1 s -1 , an I on / I off of 1.4 × 10 7 , a threshold voltage of 3.3 V, and a threshold swing of 0.20 V/decade. In addition, the average transmittance of the hybrid dielectric layer in the visible range is 90.8%. Therefore, high-entropy PVA hybrid films have high transparency, low leakage current, and good bending resistance and have broad application prospects in transparent and flexible devices.