Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering.
Julia A MundyBastien F GrossoColin A HeikesDan Ferenc SegedinZhe WangYu-Tsun ShaoCheng DaiBerit H GoodgeQuintin N MeierChristopher T NelsonBhagwati PrasadFei XueSteffen GanschowDavid A MullerLena F KourkoutisLong-Qing ChenWilliam D RatcliffNicola A SpaldinRamamoorthy RameshDarrell G SchlomPublished in: Science advances (2022)
Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO 3 . By confining thin layers of BiFeO 3 in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.