The Interface of in-situ Grown Single-layer Epitaxial MoS2 on SrTiO3(001) and (111).

SrTiO3 (STO) is a versatile substrate with a high dielectric constant, which may be used in heterostructures with 2D materials, such as MoS2, to induce interesting changes to the electronic structure. STO single crystal substrates have previously been shown to support the growth of well-defined epitaxial single-layer MoS2 crystals. The STO substrate is furthermore already known to renormalize the electronic bandgap of single-layer MoS2, but the electronic nature of the interface and its dependence on the system's epitaxy are still unclear. Herein, we have investigated an in-situ physical vapor deposition method, which could eliminate the need for ambient transfer between substrate preparation, subsequent MoS2 growth and surface characterization. Based on this, we then investigate the structure and epitaxial alignment of pristine single-layer MoS2 in various surface coverages grown on two STO substrates with a different initial surface lattice, the STO(001)(4×2) and STO(111)-(9/5×9/5) reconstructed surfaces, respectively. Scanning tunneling microscopy (STM) shows that epitaxial alignment of the single-layer MoS2 is present for both systems, reflected by orientation of MoS2 edges and a distinct moiré pattern visible on the MoS2(0001) basal place. Upon increasing the single-layer MoS2 coverage, the presence of four distinct rotational domains on the STO(001) substrate, whilst only two on STO(111), is seen to control the possibilities for the formation of coherent MoS2 domains with the same orientation. The presented methodology relies on standard physical vapor deposition in ultra-high vacuum and it may be extended to other systems to help explore pristine two-dimensional TMDC/STO systems in general.