A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors.

We report on the fabrication of a vertical 2D/3D heterojunction diode between gallium selenide (GaSe) and silicon (Si), and describe its photoresponse properties. Kelvin probe force microscopy (KPFM) has been employed to investigate the surface potentials of the GaSe/Si heterostructure, leading to the evaluation of the value of the conduction band offset at the heterostructure interface. The current-voltage measurements on the heterojunction device display a diode-like nature. This diode-like nature is attributed to the type-II band alignment that exists at the p-n interface. The key parameters of a photodetector, such as photoresponsivity, detectivity, and external quantum efficiency, have been calculated for the fabricated device and compared with those of other similar devices. The photodetection measurements of the GaSe/Si heterojunction diode show excellent performance of the device, with high photoresponsivity, detectivity, and EQE values of ∼2.8 × 10 3 A W -1 , 6.2 × 10 12 Jones, and 6011, respectively, at a biasing of -5 V. Even at zero biasing, a high photoresponsivity of 6 A W -1 was obtained, making it a self-powered device. Therefore, the GaSe/Si self-driven heterojunction diode has promising potential in the field of efficient optoelectronic devices.