Emergence of metallic surface states and negative differential conductance in thin β -FeSi 2 films on Si(001).

The electronic properties of the surface of $\beta$-FeSi$_2$ have been debated for a long \textcolor{blue}. We studied the surface states of $\beta$-FeSi$_2$ films grown on Si(001) substrates using scanning tunnelling microscopy (STM) and spectroscopy (STS), with the aid of density functional theory (DFT) calculations. STM simulations using the surface model proposed by Romanyuk \textit{et al.} [Phys. Rev. B 90, 155305 (2014)] reproduce the detailed features of experimental STM images. The result of STS showed metallic surface states in accordance with theoretical predictions. The Fermi level was pinned \textcolor{blue}{by a} surface state that appeared in the bulk band gap of the $\beta$-FeSi$_2$ film, irrespective of \textcolor{blue}{the polarity of the} substrate. We also observed negative differential conductance at $\sim$0.45 eV above the Fermi level in STS measurements performed at 4.5 K, reflecting the presence of an energy gap in the unoccupied surface states of $\beta$-FeSi$_2$.