Uniform self-rectifying resistive random-access memory based on an MXene-TiO 2 Schottky junction.

For filamentary resistive random-access memory (RRAM) devices, the switching behavior between different resistance states usually occurs abruptly, while the random formation of conductive filaments usually results in large fluctuations in resistance states, leading to poor uniformity. Schottky barrier modulation enables resistive switching through charge trapping/de-trapping at the top-electrode/oxide interface, which is effective for improving the uniformity of RRAM devices. Here, we report a uniform RRAM device based on a MXene-TiO 2 Schottky junction. The defect traps within the MXene formed during its fabricating process can trap and release the charges at the MXene-TiO 2 interface to modulate the Schottky barrier for the resistive switching behavior. Our devices exhibit excellent current on-off ratio uniformity, device-to-device reproducibility, long-term retention, and endurance reliability. Due to the different carrier-blocking abilities of the MXene-TiO 2 and TiO 2 -Si interface barriers, a self-rectifying behavior can be obtained with a rectifying ratio of 10 3 , which offers great potential for large-scale RRAM applications based on MXene materials.