Two-Dimensional Metal/Semiconductor Contact in a Janus MoSH/MoSi 2 N 4 van der Waals Heterostructure.

Following the successful synthesis of single-layer metallic Janus MoSH and semiconducting MoSi 2 N 4 , we investigate the electronic and interfacial features of metal/semiconductor MoSH/MoSi 2 N 4 van der Waals (vdW) contact. We find that the metal/semiconductor MoSH/MoSi 2 N 4 contact forms p -type Schottky contact ( p -ShC type) with small Schottky barrier (SB), suggesting that Janus MoSH can be considered as an efficient metallic contact to MoSi 2 N 4 semiconductor with high charge injection efficiency. The electronic structure and interfacial features of the MoSH/MoSi 2 N 4 vdW heterostructure are tunable under strain and electric fields, which give rise to the SB change and the conversion from p -ShC to n -ShC type and from ShC to Ohmic contact. These findings could provide a new pathway for the design of optoelectronic applications based on metal/semiconductor MoSH/MoSi 2 N 4 vdW heterostructures.