Efficient multi-barrier thin film encapsulation of OLED using alternating Al 2 O 3 and polymer layers.

Organic optoelectronic devices, especially for OLEDs, are extremely susceptibility to water vapor and oxygen which limit their widespread commercialization. In order to extend the shelf-lifetime of devices, thin film encapsulation is the most promising and challenging encapsulation process. In this study, dyad-style multilayer encapsulation structures based on alternating Al 2 O 3 layer and parylene C have been discussed as gas diffusion barriers, in which dense and pinhole-free Al 2 O 3 films were grown by atomic layer deposition (ALD) and flexible parylene C layers were deposited by chemical vapor deposition (CVD). We found the particle in ALD deposited Al 2 O 3 films process is the key killer to barrier property. The thickness of Al 2 O 3 films is the key factor which limit the amount of strain placed on barrier films. With three dyads of the optimal thickness of 30 nm Al 2 O 3 film and 500 nm parylene C, WVTR value is lower than 10 -5 g m -2 per day. In addition, the lifetime of OLEDs with and without encapsulation was 190 h and 10 h, respectively. All the results show that this TFE structure has the effective encapsulated property and does not cause degradation of the OLED devices.