Memristive and Tunneling Effects in 3D Interconnected Silver Nanowires.

A network of silver nanowires (Ag-NWs) is grown by electrodeposition in a nanoporous membrane with interconnected nanopores. This bottom-up approach fabrication method gives a conducting network with a 3D architecture and a high density of Ag-NWs. The network is then functionalized during the etching process, which leads to a high initial resistance as well as memristive behavior. The latter is expected to arise from the creation and the destruction of conducting silver filaments in the functionalized Ag-NW network. Moreover, after several cycles of measurement, the resistance of the network switches from a high-resistance regime in the GΩ range with tunnel conduction to a low-resistance regime presenting negative differential resistance in the kΩ range.