Aluminum Halide-Based Electron-Selective Passivating Contacts for Crystalline Silicon Solar Cells.

Extensive research has focused on developing wide-bandgap metal compound-based passivating contacts as alternatives to conventional doped-silicon-layer-based passivating contacts to mitigate parasitic absorption losses in crystalline silicon (c-Si) solar cells. Herein, thermally-evaporated aluminum halides (AlX)-based electron-selective passivating contacts for c-Si solar cells are investigated. A low contact resistivity of 60.5 and 38.4 mΩ cm 2 is obtained on the AlCl x /n-type c-Si (n-Si) and AlF x /n-Si heterocontacts, respectively, thanks to the low work function of AlX. Power conversion efficiencies (PCEs) of 19.1% and 19.6% are achieved on proof-of-concept n-Si solar cells featuring a full-area AlCl x /Al and AlF x /Al passivating contact, respectively. By further implementing an ultrathin SiO 2 passivation interlayer and a pre-annealing treatment, the electron selectivity (especially the surface passivation) of AlX is significantly enhanced. Accordingly, a remarkable PCE of 21% is achieved on n-Si solar cells featuring a full-area SiO 2 /AlF x /Al rear contact. AlF x -based electron-selective passivating contacts exhibit good thermal stability up to ≈400 °C and better long-term environmental stability. This work demonstrates the potential of AlF x -based electron-selective passivating contact for solar cells.