Large-area Growth of Ferroelectric Two-dimensional Γ-In 2 Se 3 Semiconductor by Spray Pyrolysis for Next-Generation Memory.

In 2 Se 3 , two-dimensional (2D) ferroelectric-semiconductor, is a promising candidate for next-generation memory device because of its outstanding electrical properties. However, the large-area manufacturing of In 2 Se 3 is still a big challenge. In this work, we introduce spray pyrolysis technique for the growth of large-area In 2 Se 3 thin-film. A polycrystalline γ-In 2 Se 3 layer could be grown on 15 cm × 15 cm glasss at the substrate temperature of 275 °C. The In 2 Se 3 ferroelectric-semiconductor field effect transistor (FeS-FET) on glass substrate demonstrates a large hysteresis window of 40.3 V at the ±40 V of gate voltage sweep and excellent uniformity. The FeS-FET exhibits an electron field effect mobility of 0.97 cm 2 /Vs and an on/off current ratio of > 10 7 in the transfer curves. We demonstrated the memory behavior of the large area, In 2 Se 3 FeS-FETs for next-generation memory. This article is protected by copyright. All rights reserved.