Signal Modulation Induced by a Hole Transfer Layer Participant Photoactive Gate: A Highly Sensitive Organic Photoelectrochemical Transistor Sensing Platform.

It is urgent to pursue appropriate gate photoactive materials for gate-to-channel signal modulation to achieve superior transconductance performances of organic photoelectrochemical transistor (OPECT) sensors. Notably, a hole transfer layer (HTL) participant CdZnS/sulfur-doped Ti 3 C 2 MXene (S-MXene) gate was designed and developed in this work, which exhibited a remarkable signal modulation performance by up to 3 orders of magnitude. Because of the incorporation of S-MXene with an enhanced electrical conductivity as the effective HTL, the signal modulation capabilities of the CdZnS/S-MXene photoactive gate were superior to those of CdZnS and CdZnS/MXene. This incorporation inhibited the recombination of the interfacial charge and facilitated the transfer of photogenerated holes, thus enhancing the photoelectric conversion performance. This enhancement facilitated fast electron transfer with a larger effective photovoltage to augment the dedoping ability of channel ions. Based on these findings, an aptasensing platform that exhibited good performance was constructed using the proposed OPECT device, with ofloxacin as a model target and an aptamer for specific recognition. The developed OPECT aptasensor had various advantages, including a high sensitivity, good linear range (1.0 × 10 -13 to 1.0 × 10 -6 M), and low limit of detection (3.3 × 10 -15 M). This study provided a proof-of-concept for the generalized development of HTL participant gates for OPECT sensors and other related applications.