High-pressure induces topology boosting thermoelectric performance of Bi 2 Te 3 .

Decoupling conductivity(σ)and Seebeck coefficient(S)by electronic topological transitions (ETT) under high pressure (2-4 GPa) is a promising method for bismuth telluride (Bi 2 Te 3 ) to optimize thermoelectric (TE) performance. However, theScannot dramatically increase with increasingσwhen ETT occurs in Bi 2 Te 3 , which impedes optimizing TE performance by utilizing ETT in Bi 2 Te 3 . A new strategy of enhanced ETT by combining lattice distortions and high pressure is proposed in this work. The lattice distortions in Bi 2 Te 3 were introduced by high pressure and high temperature (HPHT) treatment to generate surplus dislocations. The in-situ measurements ofσandSat HPHT in Bi 2 Te 3 with lattice distortions show an enhanced ETT effect at 2 GPa, which causes decoupleσandSwith an anomalous increase in its|S|about 22%. The ETT effect causes the figure of merit (ZT) of Bi 2 Te 3 can be improved to 0.275 at 1.50-2.62 GPa, 460 K, it is more than 62% compared with 0.79 GPa, at 450 K. The excellent TE performance of Bi 2 Te 3 arising from the lattice distortions can result in local non-hydrostatic pressure which enhances ETT under high pressure. This work provides a new strategy to enhance ETT to decoupleσandS, and search for better TE materials from the pressure dimension in the future.