Nonvolatile High-Speed Switching Zn-O-N Thin-Film Transistors with a Bilayer Structure.

Zinc oxynitride (ZnON) has the potential to overcome the performance and stability limitations of current amorphous oxide semiconductors because ZnON-based thin-film transistors (TFTs) have a high field-effect mobility of 50 cm 2 /Vs and exceptional stability under bias and light illumination. However, due to the weak zinc-nitrogen interaction, ZnON is chemically unstable─N is rapidly volatilized in air. As a result, recent research on ZnON TFTs has focused on improving air stability. We demonstrate through experimental and first-principles studies that the ZnF 2 /ZnON bilayer structure provides a facile way to achieve air stability with carrier controllability. This increase in air stability (e.g., nitrogen non-volatilization) occurs because the ZnF 2 layer effectively protects the atomic mixing between ZnON and air, and the decrease in the ZnON carrier concentration is caused by a shallow-to-deep electronic transition of nitrogen deficiency diffused from ZnON into the interface. Further, the TFT based on the ZnF 2 /ZnON bilayer structure enables long-term air stability while retaining an optimal switching property of high field-effect mobility (∼100 cm 2 /Vs) even at a relatively low post-annealing temperature. The ZnF 2 /ZnON-bilayer TFT device exhibits fast switching behavior between 1 kHz and 0.1 MHz while maintaining a stable and clear switching response, paving the way for next-generation high-speed electronic applications.