Solution-Processed Robust Multifunctional Memristor of 2D Layered Material Thin Film.

Memristors have gained significant attention recently due to their unique ability to exhibit functionalities for brain-inspired neuromorphic computing. Here, we demonstrate a high-performance multifunctional memristor using a thin film of liquid-phase exfoliated (LPE) 2D MoS 2 pinched between two electrodes. Nanoscale inspection of a solution-processed MoS 2 thin film using scanning electron and scanning probe microscopies revealed the high-quality and defect-free nature. Systematic current-voltage ( I-V ) characterizations depict a facile, nonvolatile resistive switching behavior of our 2D MoS 2 thin film device with a current On/Off ratio of 10 3 and energy cost of only a few picojoules. Excellent performance metrics, including at least 10 3 cycle endurance, 10 4 s retention, and switching speed down to a few nanoseconds, reflect robust high-performance data storage capability. Charge carriers trapping and detrapping at the sulfur vacancy defect sites in MoS 2 nanosheets mainly display the resistive switching property, supported by the impedance analysis and theoretical fitting results. Multifunctionality is leveraged through implementing two-input logic gate operations, edge computation, and crucial adaptive learning via a Pavlov's dogs experiment. Overall, our solution-processed MoS 2 memristor has the potential for tremendous future opportunities in integrated circuits and different computing paradigms, including energy-efficient neuromorphic computing hardware in artificial intelligence.