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Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure.

Lei PanAlexander GrutterPeng ZhangXiaoyu CheTomohiro NozakiAlex SternMike StreetBing ZhangBrian CasasQing Lin HeEun Sang ChoiSteven M DisselerDustin A GilbertGen YinQiming ShaoPeng DengYingying WuXiaoyang LiuXufeng KouSahashi MasashiXiaodong HanChristian BinekScott ChambersJing XiaKang L Wang
Published in: Advanced materials (Deerfield Beach, Fla.) (2020)
Integration of a quantum anomalous Hall insulator with a magnetically ordered material provides an additional degree of freedom through which the resulting exotic quantum states can be controlled. Here, an experimental observation is reported of the quantum anomalous Hall effect in a magnetically-doped topological insulator grown on the antiferromagnetic insulator Cr2 O3 . The exchange coupling between the two materials is investigated using field-cooling-dependent magnetometry and polarized neutron reflectometry. Both techniques reveal strong interfacial interaction between the antiferromagnetic order of the Cr2 O3 and the magnetic topological insulator, manifested as an exchange bias when the sample is field-cooled under an out-of-plane magnetic field, and an exchange spring-like magnetic depth profile when the system is magnetized within the film plane. These results identify antiferromagnetic insulators as suitable candidates for the manipulation of magnetic and topological order in topological insulator films.
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