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Even-integer quantum Hall effect in an oxide caused by a hidden Rashba effect.

Jingyue WangJunwei HuangDaniel KaplanXuehan ZhouCongwei TanJing ZhangGangjian JinXuzhong CongYongchao ZhuXiaoyin GaoYan LiangHuakun ZuoZengwei ZhuRuixue ZhuAdy SternHongtao LiuPeng GaoBinghai YanHongtao YuanHai-Lin Peng
Published in: Nature nanotechnology (2024)
In the presence of a high magnetic field, quantum Hall systems usually host both even- and odd-integer quantized states because of lifted band degeneracies. Selective control of these quantized states is challenging but essential to understand the exotic ground states and manipulate the spin textures. Here we demonstrate the quantum Hall effect in Bi 2 O 2 Se thin films. In magnetic fields as high as 50 T, we observe only even-integer quantum Hall states, but there is no sign of odd-integer states. However, when reducing the thickness of the epitaxial Bi 2 O 2 Se film to one unit cell, we observe both odd- and even-integer states in this Janus (asymmetric) film grown on SrTiO 3 . By means of a Rashba bilayer model based on the ab initio band structures of Bi 2 O 2 Se thin films, we can ascribe the only even-integer states in thicker films to the hidden Rasbha effect, where the local inversion-symmetry breaking in two sectors of the [Bi 2 O 2 ] 2+ layer yields opposite Rashba spin polarizations, which compensate with each other. In the one-unit-cell Bi 2 O 2 Se film grown on SrTiO 3 , the asymmetry introduced by the top surface and bottom interface induces a net polar field. The resulting global Rashba effect lifts the band degeneracies present in the symmetric case of thicker films.
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