Spectral Engineering of InSe Nanobelts for Full-Color Imaging by Tailoring the Thickness.

In this work, we report on the synthesis of InSe nanobelts through a catalyst-free chemical vapor deposition (CVD) growth approach. A remarkable blue shift of the peak photoresponse was observed when the thickness of the InSe nanobelt decreases from 562 to 165 nm. Silvaco Technology Computer Aided Design (TCAD) simulation reveals that such a shift in spectral response should be ascribed to the wavelength-dependent absorption coefficient of InSe, for which incident light with shorter wavelengths will be absorbed near the surface, while light with longer wavelengths will have a greater penetration depth, leading to a red shift of the absorption edge for thicker nanobelt devices. Considering the above theory, three kinds of photodetectors sensitive to blue (450 nm), green (530 nm), and red (660 nm) incident light were achieved by tailoring the thickness of the nanobelts, which can enable the spectral reconstruction of a purple "H" pattern, suggesting the potential application of 2D layered semiconductors in full-color imaging.