Optimization of Double-Gate Carbon Nanotube FET Characteristics for Short Channel Devices.

The structure and functionality of transistors with Double-Gate (DG) devices, which use carbon nanotubes as active channel regions, have been examined by the authors of this study. The DG CNT FET has been extensively simulated using an electronic device simulator with various device geometrics, including channel length, oxide thickness for its output, and transfer characteristics. In comparison to reported patents and published works, this demonstrates a significant improvement Conclusion: A new perspective on the DG CNT FET's device performance characteristics is provided by this research work, which can be scaled down to minimum channel length without Short Channel Effects (SCEs).