Study on Bottom Distributed Bragg Reflector Radius and Electric Aperture Radius on Performance Characteristics of GaN-Based Vertical-Cavity Surface-Emitting Laser.

This article presents the results of a numerical analysis of a nitride-based vertical-cavity surface-emitting laser (VCSEL). The analyzed laser features an upper mirror composed of a monolithic high-contrast grating (MHCG) and a dielectric bottom mirror made of SiO 2 and Ta 2 O 5 materials. The emitter was designed for light emission at a wavelength of 403 nm. We analyze the influence of the size of the dielectric bottom mirrors on the operation of the laser, including its power-current-voltage (LIV) characteristics. We also study the effect of changing the electrical aperture radius (active area dimensions). We demonstrate that the appropriate selection of these two parameters enables the temperature inside the laser to be reduced, lowering the laser threshold current and increasing its optical power output significantly.