In situ interfacial passivation with an arylphosphine oxide and phosphonate electron transporting layer for efficient all-solution-processed PeQLEDs.

Perovskite quantum dot light-emitting diodes (PeQLEDs) have emerged as a promising candidate for high-quality lightings and displays, where an electron transporting layer (ETL) is required to achieve balanced charge transport and thus high performance. However, the ETL is often thermally-deposited under vacuum, since the low-cost solution process would damage the underlying perovskite quantum dots (PeQDs). Here, we demonstrate efficient all-solution-processed PeQLEDs based on arylphosphine oxide (SPPO13) and phosphonate (TPPO) as the ETL. Benefitting from the coordination between PO and exposed Pb atoms, in situ interfacial passivation occurs during the solution deposition of SPPO13 or TPPO on PeQDs. As a result, bilayer films (PeQDs/ETL) exhibit improved photoluminescence quantum yields and prolonged lifetimes compared with single layer PeQDs. Correspondingly, all-solution-processed PeQLEDs are fabricated successfully via an orthogonal solvent strategy, revealing bright green emission with a promising current efficiency of 24.1 cd A -1 (12.1 lm W -1 , 6.47%) and CIE coordinates of (0.12, 0.79).