Sub-5 nm Anisotropic Pattern Transfer via Colloidal Lithography of a Self-Assembled GdF 3 Nanocrystal Monolayer.

Patterning materials with nanoscale features opens many research opportunities ranging from fundamental science to technological applications. However, current nanofabrication methods are ill-suited for sub-5 nm patterning and pattern transfer. We demonstrate the use of colloidal lithography to transfer an anisotropic pattern of discrete features into substrates with a critical dimension below 5 nm. The assembly of monodisperse, anisotropic nanocrystals (NCs) with a rhombic-plate morphology spaced by dendrimer ligands results in a well-ordered monolayer that serves as a 2D anisotropic hard mask pattern. This pattern is transferred into the underlying substrate using dry etching followed by removal of the NC mask. We exemplify this approach by fabricating an array of pillars with a rhombic cross-section and edge-to-edge spacing of 4.4 ± 1.1 nm. The fabrication approach enables broader access to patterning materials at the deep nanoscale by implementing innovative processes into well-established fabrication methods while minimizing process complexity.