Anisotropic dependence of radiation from excitons in Ga 2 O 3 /MoS 2 heterostructure.

The anisotropic dependence of radiation arising from exciton recombination in the Ga 2 O 3 /MoS 2 heterostructure is investigated, using density functional theory and the Bethe-Salpeter equation. The wurtzite (WZ) and zinc blende (ZB) structures of the Ga 2 O 3 monolayer with ferroelectric (FE) properties are assembled with a MoS 2 monolayer. Projected band structure, charge transfer and life time of excitons are discussed, to analyze which transition may be important to the creation of excitons from the electron-hole pair. A general formula of the angle-dependent intensities of radiation is derived. The characteristics of angle-dependent intensities that are closely related to the dipole moment of excitons are discussed, from the viewpoint of in-plane and out-of-plane polarizations. These predictions on radiation of the Ga 2 O 3 /MoS 2 heterostructure should guide exciton dynamics in low dimensional systems and rational design of optoelectronic devices.