Cobalt doped BiVO 4 with rich oxygen vacancies for efficient photoelectrochemical water oxidation.

A facile electrodeposition method was developed to prepare Co-BiVO 4 thin films with rich oxygen vacancies. The resulting photoanode exhibited a photocurrent density of 3.5 mA cm -2 1.23 V ( vs. reversible hydrogen electrode (RHE), AM 1.5 G), which is over two times higher than that of undoped BiVO 4 .