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An Ultrasensitive Gateless Photodetector Based on the 2D Bilayer MoS2-1D Si Nanowire-0D Ag Nanoparticle Hybrid Structure.

Ching-Han MaoAbhishek DubeyFang-Jing LeeChun-Yen ChenShin-Yi TangAshok RanjanMing-Yen LuYu-Lun CheuhShangjr GwoTa-Jen Yen
Published in: ACS applied materials & interfaces (2021)
Atomically thin transition metal dichalcogenides (TMDC) have received much attention due to their wide variety of optical and electronic properties. Among various TMDC materials, molybdenum disulfide (MoS2) has been intensely studied owing to its potential applications in nanoelectronics and optoelectronics. However, two-dimensional MoS2 photodetectors suffer from low responsivity due to low optical cross section. Combining MoS2 with plasmonic nanostructures can drastically increase scattering cross section and enhance local light-matter interaction. Moreover, suspended MoS2 has been shown to exhibit higher photoluminescence intensity and strong photogating effect, which can be employed in photodetectors. Herein, we propose an approach to utilize plasmonic nanostructures and physical suspension for 2D MoS2 photosensing enhancement by hybridizing 2D bilayer MoS2, 1D silicon nanowires, and 0D silver nanoparticles. The hybrid structure shows a gateless responsivity of 402.4 A/W at a wavelength of 532 nm, which represents the highest value among the ever reported gateless plasmonic MoS2 photodetector. The great responsivity and large active area results in an exceptional detectivity of 2.34 × 1012 Jones. This study provides a new approach for designing high-performance 2D TMDC-based optoelectronic devices.
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