Multilayer stacked ultra-wideband perfect solar absorber and thermal emitter based on SiO 2 -InAs-TiN nanofilm structure.

In this paper, a broadband solar absorber is constructed and simulated based on the finite difference time domain method (FDTD). The modeled structure of the absorber consists of cyclic stacking of five absorber cells with different periods on refractory metal W, where a single absorber cell is composed of a three-layer SiO 2 -InAs-TiN square film. Due to the Fabry-Perot resonance and the surface plasmon resonance (SPR), an absorptivity greater than 90% within a bandwidth of 2599.5 nm was achieved for the absorber. Notably, one of these bands, 2001 nm, is a high-efficiency absorption with an absorption rate greater than 99%. The average absorption efficiency reaches 99.31% at an air mass of 1.5 (AM 1.5), and the thermal radiation efficiencies are 97.35% and 97.83% at 1000 K and 1200 K, respectively. At the same time, the structure of the absorber is also polarization-independent, and when the solar incidence angle is increased to 60°, it still achieves an average absorption of 90.83% over the entire wavelength band (280 nm to 3000 nm). The novelty of our work is to provide a design idea based on a unit structure with multiple cycles, which can effectively expand the absorption bandwidth of the absorber in the visible-near-infrared wavelengths. The excellent performances make the structure widely used in the field of solar energy absorption.