High-mobility hydrogenated polycrystalline In 2 O 3 (In 2 O 3 :H) thin-film transistors.

Oxide semiconductors have been extensively studied as active channel layers of thin-film transistors (TFTs) for electronic applications. However, the field-effect mobility (μ FE ) of oxide TFTs is not sufficiently high to compete with that of low-temperature-processed polycrystalline-Si TFTs (50-100 cm 2 V -1 s -1 ). Here, we propose a simple process to obtain high-performance TFTs, namely hydrogenated polycrystalline In 2 O 3 (In 2 O 3 :H) TFTs grown via the low-temperature solid-phase crystallization (SPC) process. In 2 O 3 :H TFTs fabricated at 300 °C exhibit superior switching properties with µ FE  = 139.2 cm 2 V -1 s -1 , a subthreshold swing of 0.19 Vdec -1 , and a threshold voltage of 0.2 V. The hydrogen introduced during sputter deposition plays an important role in enlarging the grain size and decreasing the subgap defects in SPC-prepared In 2 O 3 :H. The proposed method does not require any additional expensive equipment and/or change in the conventional oxide TFT fabrication process. We believe these SPC-grown In 2 O 3 :H TFTs have a great potential for use in future transparent or flexible electronics applications.