Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone.

Polycrystalline SnO 2 thin films were grown by atomic layer deposition (ALD) on SiO 2 /Si(100) substrates from SnI 4 and O 3 . Suitable evaporation temperatures for the SnI 4 precursor as well as the relationship between growth per cycle and substrate temperature were determined. Crystal growth in the films in the temperature range of 225-600 °C was identified. Spectroscopic analyses revealed low amounts of residual iodine and implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO 2 films was established.