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Metavalent Bonding Origins of Unusual Properties of Group IV Chalcogenides.

Raagya AroraUmesh V WaghmareChintamani Nagesa Ramachandra Rao
Published in: Advanced materials (Deerfield Beach, Fla.) (2022)
A distinct type of metavalent bonding (MVB) was recently proposed to explain an unusual combination of anomalous functional properties of group IV chalcogenide crystals, whose electronic mechanisms and origin remain controversial. Through theoretical analysis of evolution of bonding along continuous paths in structural and chemical composition space, we demonstrate emergence of MVB in rocksalt chalcogenides as a consequence of weakly broken symmetry of parent metallic simple-cubic crystals of Group V metalloids. High electronic degeneracy at the nested Fermi surface of the parent metal drives spontaneous breaking of its translational symmetry with structural and chemical fields, which open up a small energy gap and mediate strong coupling between conduction and valence bands making metavalent crystals highly polarizable, conductive, and sensitive to bond-lengths. Stronger symmetry breaking structural and chemical fields, however, transform them discontinuously to covalent and ionic semiconducting states respectively. MVB involves bonding and antibonding pairwise interactions alternating along linear chains of at least five atoms, which facilitate long range electron transfer in response to polar fields and cause unusual properties. Our precise picture of MVB predicts anomalous second order Raman scattering as an addition to set of their unusual finger-printing properties, and will guide in design of new metavalent materials with improved thermoelectric, ferroelectric and nontrivial electronic topological properties. This article is protected by copyright. All rights reserved.
Keyphrases
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