Enhanced Operational Characteristics Attained by Applying HfO 2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study.

This study investigates the operating characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by applying HfO 2 as the passivation layer. Before analyzing HEMTs with various passivation structures, modeling parameters were derived from the measured data of fabricated HEMT with Si 3 N 4 passivation to ensure the reliability of the simulation. Subsequently, we proposed new structures by dividing the single Si 3 N 4 passivation into a bilayer (first and second) and applying HfO 2 to the bilayer and first passivation layer only. Ultimately, we analyzed and compared the operational characteristics of the HEMTs considering the basic Si 3 N 4 , only HfO 2 , and HfO 2 /Si 3 N 4 (hybrid) as passivation layers. The breakdown voltage of the AlGaN/GaN HEMT having only HfO 2 passivation was improved by up to 19%, compared to the basic Si 3 N 4 passivation structure, but the frequency characteristics deteriorated. In order to compensate for the degraded RF characteristics, we modified the second Si 3 N 4 passivation thickness of the hybrid passivation structure from 150 nm to 450 nm. We confirmed that the hybrid passivation structure with 350-nm-thick second Si 3 N 4 passivation not only improves the breakdown voltage by 15% but also secures RF performance. Consequently, Johnson's figure-of-merit, which is commonly used to judge RF performance, was improved by up to 5% compared to the basic Si 3 N 4 passivation structure.