Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope.
Jingli WangLejuan CaiJiewei ChenXuyun GuoYuting LiuZichao MaZhengdao XieHao HuangMansun ChanYe ZhuLei LiaoQiming ShaoYang ChaiPublished in: Science advances (2021)
[Figure: see text].
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