In-situ Device-level TEM Characterization Based on Ultra-flexible Multilayer MoS 2 Micro-cantilever.

Current state-of-the-art in-situ TEM characterization technology has been capable of statically or dynamically nanorobotic manipulating specimens, affording abundant atom-level material attributes. However, an insurmountable barrier between material attributes investigations and device-level application explorations exists due to the lack of mature in-situ TEM manufacturing technology and sufficient external coupled stimulus. These limitations seriously prevent the development of in-situ device-level TEM characterization. Herein, a representative in-situ opto-electromechanical TEM characterization platform was put forward by integrating an ultra-flexible micro-cantilever chip with multi-physical coupling fields (optical, mechanical, and electrical fields) for the first time. On this platform, static and dynamic in-situ device-level TEM characterizations were implemented by utilizing 2D multilayer MoS 2 nanoflake as channel material. E-beam modulation behavior in MoS 2 transistors was demonstrated at ultra-high e-beam acceleration voltage (300 kV), stemming from inelastic scattering electron doping into MoS 2 nanoflakes. Moreover, in-situ dynamic bending MoS 2 nanodevices without/with laser irradiation revealed asymmetric piezoresistive properties based on electromechanical effects and secondary enhanced photocurrent based on opto-electromechanical coupling effects, accompanied by real-time monitoring atom-level characterization. Our approach provides a step towards advanced in-situ device-level TEM characterization technology with excellent perception ability and inspires the further application of in-situ TEM characterization with ultra-sensitive force feedback, light sensing, and so on. This article is protected by copyright. All rights reserved.