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In Situ Buried Interface Engineering towards Printable Pb-Sn Perovskite Solar Cells.

Johnpaul Kurisinkal PiousHuagui LaiJuntao HuDeying LuoEvgeniia GilshteinSeverin SiegristRadha K KothandaramanZheng Hong LuChristian M WolffAyodhya N TiwariFan Fu
Published in: ACS applied materials & interfaces (2024)
High-efficiency Pb-Sn narrow-bandgap perovskite solar cells (PSCs) heavily rely on PEDOT:PSS as the hole-transport layer (HTL) owing to its excellent electrical conductivity, dopant-free nature, and facile solution processability. However, the shallow work function ( W F ) of PEDOT:PSS consequently results in severe minority carrier recombination at the perovskite/HTL interface. Here, we tackle this issue by an in situ interface engineering strategy using a new molecule called 2-fluoro benzylammonium iodide (FBI) that suppresses nonradiative recombination near the Pb-Sn perovskite (FA 0.6 MA 0.4 Pb 0.4 Sn 0.6 I 3 )/HTL bottom interface. The W F of PEDOT:PSS increases by 0.1 eV with FBI modification, resulting in Pb-Sn PSCs with 20.5% efficiency and an impressive V OC of 0.843 V. Finally, we have successfully transferred our in situ buried interface modification strategy to fabricate blade-coated FA 0.6 MA 0.4 Pb 0.4 Sn 0.6 I 3 PSCs with 18.3% efficiency and an exceptionally high V OC of 0.845 V.
Keyphrases
  • perovskite solar cells
  • heavy metals
  • high efficiency
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  • risk assessment
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  • early onset
  • reduced graphene oxide
  • pet ct
  • ionic liquid
  • drug induced