Study on the Preparation and PEC-Type Photodetection Performance of β-Bi 2 O 3 Thin Films.

Bismuth-based compounds have been regarded as a kind of promising material due to their narrow bandgap, high carrier mobility, low toxicity, and strong oxidation ability, showing potential applications in the field of photoelectrochemical (PEC) activities. They can be applied in sustainable energy production, seawater desalination and treatment, optical detection and communication, and other fields. As a member of the broader family of bismuth-based materials, β-Bi 2 O 3 exhibits significant advantages for applications in engineering, including high photoelectric response, stability in harsh environments, and excellent corrosion resistance. This paper presents the synthesis of β-Bi 2 O 3 thin films utilizing the mist chemical vapor deposition (CVD) method at the optimal temperature of 400 °C. Based on the β-Bi 2 O 3 thin film synthesized at optimal temperature, a PEC-type photodetector was constructed with the highest responsivity R of 2.84 mA/W and detectivity D of 6.01 × 10 10 Jones, respectively. The photodetection performance was investigated from various points like illumination light wavelength, power density, and long-term stability. This study would broaden the horizontal and practical applications of β-Bi 2 O 3 .