In Situ Synchrotron XRD Characterization of Piezoelectric Al 1-x Sc x N Thin Films for MEMS Applications.

Aluminum scandium nitride (Al 1-x Sc x N) film has drawn considerable attention owing to its enhanced piezoelectric response for micro-electromechanical system (MEMS) applications. Understanding the fundamentals of piezoelectricity would require a precise characterization of the piezoelectric coefficient, which is also crucial for MEMS device design. In this study, we proposed an in situ method based on a synchrotron X-ray diffraction (XRD) system to characterize the longitudinal piezoelectric constant d 33 of Al 1-x Sc x N film. The measurement results quantitatively demonstrated the piezoelectric effect of Al 1-x Sc x N films by lattice spacing variation upon applied external voltage. The as-extracted d 33 had a reasonable accuracy compared with the conventional high over-tone bulk acoustic resonators (HBAR) devices and Berlincourt methods. It was also found that the substrate clamping effect, leading to underestimation of d 33 from in situ synchrotron XRD measurement while overestimation using Berlincourt method, should be thoroughly corrected in the data extraction process. The d 33 of AlN and Al 0.9 Sc 0.1 N obtained by synchronous XRD method were 4.76 pC/N and 7.79 pC/N, respectively, matching well with traditional HBAR and Berlincourt methods. Our findings prove the in situ synchrotron XRD measurement as an effective method for precise piezoelectric coefficient d 33 characterization.