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Dislocations as Single Photon Sources in Two-Dimensional Semiconductors.

Xiaocheng ZhouZhuhua ZhangWanlin Guo
Published in: Nano letters (2020)
Single photon sources hold great promise in quantum information technologies and are often materialized by single atoms, quantum dots, and point defects in dielectric materials. Yet, these entities are vulnerable to annealing and chemical passivation, ultimately influencing the stability of photonic devices. Here, we show that topologically stable dislocations in transition metal dichalcogenide monolayers can act as single photon sources, as supported by calculated defect levels, diploe matrix elements for transition, and excitation lifetimes with first-principles. The emission from dislocations can range from 0.48 to 1.29 eV by varying their structure, charge state, and chemical makeup in contrast to the visible range provided by previously reported sources. Since recent experiments have controllably created dislocations in monolayer materials, these results open the door to utilizing robustly stable defects for quantum computing.
Keyphrases
  • drinking water
  • quantum dots
  • energy transfer
  • transition metal
  • molecular dynamics
  • minimally invasive
  • computed tomography
  • solar cells
  • health information
  • deep learning