Influence of the interface structure and strain on the rectification performance of lateral MoS 2 /graphene heterostructure devices.

We systematically study the influence of interface configuration and strain on the electronic and transport properties of lateral MoS 2 /graphene heterostructures by first-principles calculations and quantum transport simulations. We first identify the favorable heterostructure configurations with C-S and/or C-Mo bonds at the interfaces. Strain can be applied to graphene or MoS 2 and would not change the relative stabilities of different heterostructures. Band alignment calculations show that all the lateral heterostructures have n-type Schottky contacts. The current-voltage characteristics of the lateral MoS 2 /graphene heterostructure diodes exhibit good rectification performance. Too strong and too weak interface interactions do not benefit electronic transport. The MoS 2 /graphene heterostructures with moderate C-S bonds at the interface have larger currents through the junctions than those with C-Mo bonds at the interface. The maximal rectification ratio of the lateral diode with strain applied to MoS 2 can reach up to 10 5 . With strain applied to graphene, the currents through the heterostructures can increase by 1-2 orders of magnitude due to the reduced Schottky barrier heights at the interface, but the rectification ratio is reduced with a maximal value of 10 4 . Our calculations can serve as a theoretical guide to design rectifier and diode devices based on two-dimensional lateral heterostructures.