Optimized study of the annealing effect on the electrical and structural properties of HDLC thin-films.

The plasma-enhanced chemical vapor deposition (PECVD) technique has been utilized for the facile surface deposition of hydrogenated diamond-like carbon (HDLC) thin-films onto Si(100) substrates. The as-deposited film surface is homogenous, free of pinholes, and adheres to the substrate. Annealing of the synthesized HDLC surface in a vacuum was performed in the temperature range of 200 to 1000 °C. A host of instrumental techniques, viz. FTIR spectroscopy, AFM, STM, and EC-AFM, were successfully employed to detect the morphological transformation in the HDLC films upon annealing. EC-AFM studies show irreversible biased behavior after undergoing a surface redox couple reaction and morphological change. Raman spectroscopy was carried out along with STM and EC-AFM to determine the functional nature and conductivity of the annealed surface.