Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets.
Fei HuiWenjing FangWei Sun LeongTewa KpulunHaozhe WangHui Ying YangMarco A VillenaGary HarrisJing KongMario LanzaPublished in: ACS applied materials & interfaces (2017)
Large-area hexagonal boron nitride (h-BN) can be grown on polycrystalline metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electronic devices is unknown. Conductive atomic force microscopy (CAFM) and probe station characterization show that the tunneling current across the h-BN stack fluctuates up to 3 orders of magnitude from one substrate (Pt) grain to another. Interestingly, the variability in the tunneling current across the h-BN within the same substrate grain is very low, which may enable the use of CVD-grown h-BN in ultra scaled technologies.