Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiN x as a Gate Dielectric.

In this paper, SiN x film deposited by plasma-enhanced chemical vapor deposition was employed as a gate dielectric of AlGaN/GaN high electron mobility transistors (HEMTs). We found that the NH 3 flow during the deposition of SiN x can significantly affect the performances of metal-insulator-semiconductor (MIS) HEMTs. Compared to that without using NH 3 flow, the device with the optimized NH 3 flow exhibited three orders of magnitude lower gate leakage current, two orders of magnitude higher ON/OF drain current ratio, and an increased breakdown field by 69%. In addition, an in situ N 2 plasma surface treatment prepared prior to SiN x deposition can further improve DC performances of MIS-HEMTs to a very low gate leakage current of 10 -9 mA/mm and a high ON/OFF drain current ratio up to 10 9 by reducing the interface state density. These results demonstrate the great potential for using PECVD-SiN x as a gate dielectric in GaN-based MIS-HEMTs.