Nanoscale probing of surface potential landscape at MoS 2 /BP van der Waals p-n heterojunction.
Mamta RaturiArneet KaurHimanshu TyagiMonika BhakarJyoti SainiManpreet KaurAbir De SarkarKiran Shankar HazraPublished in: Nanotechnology (2022)
2D van der Waals heterostructure paves a path towards next generation semiconductor junctions for nanoelectronics devices in the post silicon era. Probing the band alignment at a real condition of such 2D contacts and experimental determination of its junction parameters is necessary to comprehend the charge diffusion and transport through such 2D nano-junctions. Here, we demonstrate the formation of the p-n junction at the MoS 2 /Black phosphorene (BP) interface and conduct a nanoscale investigation to experimentally measure the band alignment at real conditions by means of measuring the spatial distribution of built-in potential, built-in electric field, and depletion width using the Kelvin probe force microscopy (KPFM) technique. We show that optimization of lift scan height is critical for defining the depletion region of MoS 2 /BP with nanoscale precision using the KPFM technique. The variations in the built-in potential and built-in electric field with varying thicknesses of MoS 2 are revealed and calibrated.
Keyphrases
- single molecule
- quantum dots
- atomic force microscopy
- room temperature
- visible light
- living cells
- reduced graphene oxide
- computed tomography
- transition metal
- single cell
- human health
- molecular dynamics simulations
- high resolution
- body mass index
- magnetic resonance imaging
- physical activity
- ionic liquid
- climate change
- solid phase extraction