Efficient and Stable Monolithic Perovskite/Silicon Tandem Solar Cells Enabled by Contact-Resistance-Tunable Indium Tin Oxide Interlayer.

The imperfect charge behavior at the interfaces of perovskite/electron-transport layer (ETL)/transparent conducting oxide (TCO) limits the further performance improvement of perovskite/silicon tandem solar cells. Herein, we deposited an indium tin oxide interlayer between ETL and TCO to address this issue. Specifically, the interlayer was prepared using an all-physical and H 2 O-free method, electron-beam evaporation, which can avoid any potential damage to the underlying perovskite and ETL layers. Moreover, the interlayer's composition can be readily tuned by changing the evaporator component, enabling us to regulate the contact resistance and energy-level alignment of the ETL/TCO interface. Consequently, the resultant perovskite/silicon tandem solar cells exhibit an impressive power conversion efficiency of 30.8% (certified 30.3%). Moreover, the device retains 98% of its initial PCE after continuous operation under ambient conditions for 1078 hours, representing one of the most stable and efficient perovskite/silicon tandem solar cells. This article is protected by copyright. All rights reserved.