In situ synthesis of C-doped BiVO 4 with natural leaf as a template under different calcination temperatures.

In this work, a series of C-doped BiVO 4 (BiVO 4 - T ) with natural leaf structures were synthesized by a dipping-calcination method with the leaf of Chongyang wood seedling as a template under different calcination temperatures. The structures and morphologies of BiVO 4 - T were observed by FE-SEM observations. The doped carbon in BiVO 4 - T was formed in situ from the natural leaf during the calcination process and the amount of doping could be regulated from 0.51-1.16 wt% by controlling the calcination temperature. It was found that the sample calcined at 600 °C (BiVO 4 -600) with a C-doping content of 1.16 wt% showed the best photocatalytic degradation activity. After 120 min visible light irradiation, the photocatalytic decomposition efficiency of RhB for BiVO 4 -600 is 2.2 times higher than that of no template BiVO 4 . The enhanced photocatalytic performance is ascribed to the combined action of the unique morphology and doped-carbon. It is considered that the unique structures and carbon doping of BiVO 4 -600 are in favor of the enhancement of visible light absorption, which was supported by UV-vis DRS. Furthermore, the C-doping can enhance the efficient separation and transfer of the photo-generated electron-hole pairs, as proved by PL measurements. This study provides a simple dipping-calcination method and found the best calcination temperature to fabricate a high-performance BiVO 4 , which simultaneously achieves morphology and C-doping control in one step.