Improved photovoltaic performance of Pb-free AgBi 2 I 7 based photovoltaics.

Hybrid perovskites based on bismuth are good candidates for developing lead-free and air-stable photovoltaics, but they have historically been constrained by poor surface morphologies and large band-gap energies. Monovalent silver cations are incorporated into iodobismuthates as part of a novel materials processing method to fabricate improved bismuth-based thin-film photovoltaic absorbers. However, a number of fundamental characteristics prevented them from achieving better efficiency. We examine bismuth iodide perovskite made of silver with improvements in surface morphology and a narrow band gap, and we achieve high power conversion efficiency. AgBi 2 I 7 perovskite was used in the fabrication of PSCs as a material for light absorption, and its optoelectronic proficiencies were also studied. We reduced the band gap to 1.89 eV and achieved a maximum power conversion efficiency of 0.96% using the solvent engineering approach. Additionally, simulation studies verified an efficiency of 13.26% by using AgBi 2 I 7 as a light absorber perovskite material.