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Strain-Engineered Oxygen Vacancies in CaMnO3 Thin Films.

Ravini U ChandrasenaWeibing YangQingyu LeiMario U Delgado-JaimeKanishka D WijesekaraMaryam GolalikhaniBruce A DavidsonElke ArenholzKeisuke KobayashiMasaaki KobataFrank M F de GrootUlrich AschauerNicola A SpaldinXiaoxing XiAlexander X Gray
Published in: Nano letters (2017)
We demonstrate a novel pathway to control and stabilize oxygen vacancies in complex transition-metal oxide thin films. Using atomic layer-by-layer pulsed laser deposition (PLD) from two separate targets, we synthesize high-quality single-crystalline CaMnO3 films with systematically varying oxygen vacancy defect formation energies as controlled by coherent tensile strain. The systematic increase of the oxygen vacancy content in CaMnO3 as a function of applied in-plane strain is observed and confirmed experimentally using high-resolution soft X-ray absorption spectroscopy (XAS) in conjunction with bulk-sensitive hard X-ray photoemission spectroscopy (HAXPES). The relevant defect states in the densities of states are identified and the vacancy content in the films quantified using the combination of first-principles theory and core-hole multiplet calculations with holistic fitting. Our findings open up a promising avenue for designing and controlling new ionically active properties and functionalities of complex transition-metal oxides via strain-induced oxygen-vacancy formation and ordering.
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