Bimetallic phosphide decorated Mo-BiVO 4 for significantly improved photoelectrochemical activity and stability.

Bismuth vanadate photoanode has shown great potential for photoelectrochemical (PEC) catalysis, but it needs to be further modified because of its relatively low charge-separation efficiency and poor stability. Herein, the bimetallic phosphide NiCoP decorated Mo-BiVO 4 is fabricated through the electrodeposition and drop-casting method, which significantly improves the charge separation and surface oxidation reaction. Therefore, the fabricated NiCoP/Mo-BiVO 4 photoanode exhibits a low onset potential of 0.21 V ( vs. RHE) and high photocurrent of 3.21 mA cm -2 at 1.23 V ( vs. RHE), which is 3.12 times higher than that of pure BiVO 4 . Importantly, the decoration of NiCoP significantly improve the stability of BiVO 4 photoanode.