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Initialization-Free and Magnetic Field-Free Spin-Orbit p-Bits with Backhopping-like Magnetization Switching for Probabilistic Applications.

Ruizhi RenYi CaoChao WangYicheng GuanShuai LiuLijin WangZeting DuChun FengZelalem Abebe BekeleXiukai LanNan ZhangGuang YangLe WangBaohe LiYong HuYan LiuStuart S P ParkinKaiyou WangGuanghua Yu
Published in: Nano letters (2024)
Probabilistic bits (p-bits) with thermal- and spin torque-induced nondeterministic magnetization switching are promising candidates for performing probabilistic computing. Previously reported spin torque p-bits include volatile low-energy barrier nanomagnets (LBNMs) with spontaneously fluctuating magnetizations and initialization-necessary nonvolatile magnets. However, initialization-free nonvolatile spin torque p-bits are still lacking. Here, we demonstrate moderately thermal stable spin-orbit torque (SOT) p-bits with non-consecutively deposited Pt//Pt/Co/Pt stacks. Backhopping-like (BH) magnetization switching with a wide range current-tunable probability of final up and down magnetization states from 0% to 100% was achieved, regardless of the initial magnetization state, which was attributed to the interplay of SOT and thermal contributions. Integer factorization using such BH-SOT p-bits in zero magnetic field was demonstrated at times that are significantly shorter than those of existing nonvolatile STT or volatile LBNMs p-bits. Our realization of initialization-free and magnetic field-free moderately thermally stable BH-SOT p-bits opens up a new perspective for probabilistic spintronic applications.
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